ABSTRACT
Electronic circuits are becoming more susceptible to errors
caused by radiation due to scaling down technological node
and high operating frequencies [4, 5, 11].This work presents
a comparative analysis of the sensitivity radiation for
different XOR gate topologies 16 nm. The doors were
implemented considering two different devices:
Complementary Metal-Oxide Semiconductor (CMOS bulk)
and Fin Field-Effect Transistor (FinFET) and two logics:
Complementary Logic (CMOS logic) and Logic Passage
Transistor (PTL). To allow a more detailed comparison, this
work also discusses the critical delay results, power and the
Power-Delay Product (PDP), a metric that defines the
power dissipated by the circuit to perform an operation, for
each version of XOR. The doors PTL-based XORs showed
superior improvements 13% for the critical delay and 11%
for the PDP in relation to CMOS logic. The topologies of the
PTL family still showed greater robustness against the effects
of radiation when compared to ports implemented with
CMOS logic, with a Linear Energy Transfer (LET) being
almost 30% higher for CMOS devices and approximately
20% higher for FinFET devices. In addition, circuits based
on FinFET are about 70% faster, have a PDP 80% smaller
and are approximately 300x more robust than CMOS
technology, with an improvement in the LET threshold of
both logical families evaluated.